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This report focuses on studying and fabricating Ta-doped SnO2 (TTO) films following various depositing temperatures. TTO films were deposited on quartz glass substrates using a direct current (DC) magnetron sputtering method. Structure and opto-electrical properties were investigated by X-ray patterns, Uv-Vis spectra and Hall measurement. These results show a tetragonal rutile structure of the SnO2 in which the preferred (101) was dominant. The best conductivity of TTO film was achieved at the optimum depositing temperature of 300oC with resistivity, hole concentration, and mobility of 4,50 x 10-3 Ωcm, 5,51 x 1020 cm-3, 3,08 cm2V-1s-1, respectively. Furthermore, the average transmittance of the films was above 80%. The I-V characteristics of the n-TTO/p-Si was investigated in the dark and illumination.