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This study investigates annealing temperature on structural, electrical properties, and pH response of the Sb-doped SnO2 membrane. Sb-doped SnO2 films were deposited on the quartz substrate by sol-gel dip-coating technique. The films were annealed at temperatures 300˚C, 500˚C, and 700˚C in the air for 120 minutes. The structure, surface morphologies, and electrical properties were observed by X-ray diffraction, FESEM images, and Hall measurements. The results showed that lattice constant, crystal size, and particle size are affected by annealed temperature. The crystal size increased from 17 to 27 nm as the temperature increased from 300˚C to 700˚C. The resistivity of films decreases in the range temperatures of 300˚C and 500˚C and increases again when the annealed temperature at 700˚C. In addition, the ATO-700˚C membrane achieved the highest sensitivity value of 50 mV/pH.