SILICON NANOWIRE FIELD EFFECT TRANSISTOR AND CURRENT-VOLTAGE CHARACTERISTICS OF THE DEVICE

Abstract

Nanowire Field Effect Transistors (NW-FETs) have been one of the most exciting research topics, attracting special attention from scientists worldwide. Many recent studies demonstrate that these devices exhibit excellent electromechanical properties and can be used for manufacturing the next-generation integrated circuits (ICs). This paper presents a model of an NW-FET, consisting of a silicon nanowire placed in the channel to enhance conduction efficiency and mitigate the short-channel effects. A novel approach in this research involves the utilization of the Schrödinger-Poisson equation and the Non-equilibrium Green’s Function (NEGF) method to calculate current-voltage characteristics in the component. Subsequently, the calculated results are simulated using Matlab software with various parameters such as channel length, semiconductor doping concentration, and gate oxide thickness, etc. The experiments indicate that the proposed method gives us accurate results and can be applied to other nanoscale devices.